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| september 2008 2008 mos-tech semiconductor corporation MT4435 rev b MT4435 30v p -channel powertrench mosfet general description this p -channel mosfet is a rugged gate version of mos-tech semiconductor?s advanced powertrench process. it has been optimized for power management applications requiring a wide range of gav e drive voltage ratings (4.5v ? 25v). applications power management load switch battery protection features ?8.8 a, ?30 v r ds(on) = 20 m w @ v gs = ?10 v r ds(on) = 35 m w @ v gs = ?4.5 v low gate charge (17nc typical) fast switching speed high performance trench technology for extremely low r ds(on) high power and current handling capability s d s s so-8 d d d g d d d d s s s g pin 1 so-8 4 3 2 1 5 6 7 8 absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage ?30 v v gss gate-source voltage 25 v i d drain current ? continuous (note 1a) ?8.8 a ? pulsed ?50 power dissipation for single operation (note 1a) 2.5 (note 1b) 1.2 p d (note 1c) 1 w t j , t stg operating and storage junction temperature range ?55 to +175 c thermal characteristic s r qja thermal resistance, junction-to- ambient (note 1a) 50 c/w r qja thermal resistance, junction-to- ambient (note 1c) 125 c/w r qjc thermal resistance, junction-to-case (note 1) 25 c/w package marking and ordering information device marking device reel size tape width quantity MT4435 13?? 12mm 2500 units MT4435 m o s - t e c h s e m i c o n d u c t o r free datasheet http:///
MT4435 rev b electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v , i d = ?250 ma ?30 v dbv dss dt j breakdown voltage temperature coefficient i d = ?250 ma, referenced to 25c ?21 mv/ c i dss zero gate voltage drain current v ds = ?24 v, v gs = 0 v ?1 ma i gssf gate?body leakage, forward v gs = 25 v, v ds = 0 v 100 na i gssr gate?body leakage, reverse v gs = ?25 v, v ds = 0 v ?100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = ?250 ma ?1 ?1.7 ?3 v dv gs(th) dt j gate threshold voltage temperature coefficient i d = ?250 ma, referenced to 25c 5 mv/ c r ds(on) static drain?source on?resistance v gs = ?10 v, i d = ?8.8 a v gs = ?4.5 v, i d = ?6.7 a v gs = ?10 v, i d = ?8.8a, t j =125c 15 22 19 20 35 32 m w i d(on) on?state drain current v gs = ?10 v, v ds = ?5 v ?50 a g fs forward transconductance v ds = ?5 v, i d = ?8.8 a 24 s dynamic characteristics c iss input capacitance 1604 pf c oss output capacitance 408 pf c rss reverse transfer capacitance v ds = ?15 v, v gs = 0 v, f = 1.0 mhz 202 pf switching characteristics (note 2) t d(on) turn?o n delay time 13 23 ns t r turn?on rise time 13.5 24 ns t d(off) turn?off delay time 42 68 ns t f turn?off fall time v dd = ?15 v, i d = ?1 a, v gs = ?10 v, r gen = 6 w 25 40 ns q g total gate charge 17 24 nc q gs gate?source charge 5 nc q gd gate?drain charge v ds = ?15 v, i d = ?8.8 a, v gs = ?5 v 6 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current ?2.1 a v sd drain?source diode forward voltage v gs = 0 v, i s = ?2.1 a (note 2) ?0.73 ?1.2 v notes: 1. r qja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. r qjc is guaranteed by design while r qca is determined by the user's board design. a) 50c/w when mounted on a 1in 2 pad of 2 oz copper b) 105c/w when mounted on a .04 in 2 pad of 2 oz copper c) 125c/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300ms, duty cycle < 2.0% MT4435 m o s - t e c h s e m i c o n d u c t o r free datasheet http:/// MT4435 rev b typical characteristics 0 10 20 30 40 50 0 1 2 3 -v ds , drain to source voltage (v) -i d , drain current (a) v gs = -10v -3.0v -3.5v -4.0v -4.5v v -6.0v 0.8 1 1.2 1.4 1.6 1.8 2 0 10 20 30 40 50 -i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs =-4.5v -5.0v -6.0v -7.0v -8.0v -10v -4.5v figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = -8.8a v gs = -10v 0.01 0.02 0.03 0.04 0.05 0.06 0.07 2 4 6 8 10 -v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = -4.4a t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 10 20 30 40 1.5 2 2.5 3 3.5 4 -v gs , gate to source voltage (v) -i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = -5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , body diode forward voltage (v) -i s , reverse drain current (a) v gs =0v t a = 125 o c 25 o c -55 o c figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. MT4435 m o s - t e c h s e m i c o n d u c t o r free datasheet http:/// MT4435 rev b typical characteristics 0 2 4 6 8 10 0 6 12 18 24 30 q g , gate charge (nc) -v gs , gate-source voltage (v) i d = -8.8a v ds = -5v -10v -15v 0 500 1000 1500 2000 2500 0 5 10 15 20 25 30 -v ds , drain to source voltage (v) capacitance (pf) c iss c oss c rss f = 1 mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-source voltage (v) -i d , drain current (a) dc 1s 100ms 100 m s r ds(on) limit v gs = -10v single pulse r q ja = 125 o c/w t a = 25 o c 10ms 1ms 10s 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r q ja = 125c/w t a = 25c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, time (sec) r(t), normalized effective transient thermal resistance r q ja(t) = r(t) + r q ja r q ja = 125 o c/w tj - t a = p * r q ja(t) duty cycle, d = t1 / t 2 p(pk) t 1 t2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient thermal response will change depending on the circuit board design. MT4435 m o s - t e c h s e m i c o n d u c t o r free datasheet http:/// soic(8lds) packaging configuration: figure 1.0 components leader tape 1680mm minimum or 210 empty pockets trailer tape 640mm minimum or 80 empty pockets soic(8lds) tape leader and trailer configuration: figure 2.0 cover tape carrier tape note/comments packaging option soic (8lds) packaging information standard (no flow code) l86z f011 packaging type reel size actr 13" dia rail/tube - tnr 13" dia qty per reel/tube/bag 2,500 95 4,000 box dimension (mm) 343x64x343 530x130x83 343x64x343 max qty per box 5,000 30,000 8,000 d84z tnr 7" dia 500 184x187x47 1,000 weight per unit (gm) 0.0774 0.0774 0.0774 0.0774 weight per reel (kg) 0.6060 - 0.9696 0.1182 esd label actr label 343mm x 342mm x 64mm standard intermediate box MT4435actr labe l sample label xh1 MT4435actr 2500 xh2 c97h22k2-8d3h-k143 p6070561 spec: qty: 2500 -mos-tech semiconductor ltd- mt 4435 8d3h soic-8 unit orientation mt 4435 8d3h pin 1 static dissipative embossed carrier tape actr label antistatic cover tape esd label electrostatic sensitive devices do no t shi p or sto re n ear stro ng electrostatic electro magn eti c, mag netic o r r adio active fi eld s tnr date pt numb er peel stren gth min ___ __ ____ __ ___g ms max _____________ gms customized label packaging description: soic-8 parts are shipped in tape. the carrier tape is made from a dissipative (carbon filled) polycarbonate resin. the cover tape is a multilayer film (heat activated adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. these reeled parts in standard option are shipped with 2,500 units per 13" or 330cm diameter reel. the reels are dark blue in color and is made of polystyrene plastic (anti- static coated). other option comes in 500 units per 7" or 177cm diameter reel. this and some other options are further described in the packaging information table. these full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. one box contains two reels maximum. and these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. mt 4435 8d3h mt 4435 8d3h mt 4435 8d3h soic-8 tape and reel data sep 2008 , rev. b ?2008 mos-tech semiconductor corporation m o s - t e c h s e m i c o n d u c t o r free datasheet http:/// ? 1998 f4483a8i se4miconductor corporation dimensions are in millimeter pkg type a0 b0 w d0 d1 e1 e2 f p1 p0 k0 t wc tc soic (8lds) (12mm) 6.50 +/-0.10 5.30 +/-0.10 12.0 +/-0.3 1.55 +/-0.05 1.60 +/-0.10 1.75 +/-0.10 10.25 min 5.50 +/-0.05 8.0 +/-0.1 4.0 +/-0.1 2.1 +/-0.10 0.450 +/- 0.150 9.2 +/-0.3 0.06 +/-0.02 p1 a0 d1 p0 f w e1 d0 e2 b0 tc wc k0 t dimensions are in inches and millimeters tape size reel option dim a dim b dim c dim d dim n dim w1 dim w2 dim w3 (lsl-usl) 12mm 7" dia 7.00 177.8 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 2.165 55 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 0.606 11.9 15.4 12mm 13" dia 13.00 330 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 7.00 178 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 0.606 11.9 15.4 see detail aa dim a max 13" diameter option 7" diameter option dim a max see detail aa w3 w2 max measured at hub w1 measured at hub dim n dim d min dim c b min detail aa notes: a0, b0, and k0 dimensions are determined with respect to the eia/jedec rs-481 rotational and lateral movement requirements (see sketches a, b, and c). 20 deg maximum component rotation 0.5mm maximum 0.5mm maximum sketch c (top view) component lateral movement typical component cavity center line 20 deg maximum typical component center line b0 a0 sketch b (top view) component rotation sketch a (side or front sectional view) component rotation user direction of feed soic(8lds) embossed carrier tape configuration: figure 3.0 soic(8lds) reel configuration: figure 4.0 soic-8 tape and reel data, continued sep 2008 , rev. b ?2008 mos-tech semiconductor corporation m o s - t e c h s e m i c o n d u c t o r free datasheet http:/// soic-8 (pkg code s1) 1 : 1 scale 1:1 on letter size paper di me n si o n s s h ow n be l ow a re in : inches [millimeters] part weight per unit (gram): 0.0774 soic-8 package dimensions sep 2008, rev. b 9 ?2008 mos-tech semiconductor corporation m o s - t e c h s e m i c o n d u c t o r free datasheet http:/// 1. this document is provided for reference purposes only so that 0 r v w h f k customers may select the appropriate 0 r v w h f k products for their use. 0 r v w h f k neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of 0 r v w h f k or any third party with respect to the information in this document. 2. 0 r v w h f k shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. you should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. when exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. all information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. such information, however, is subject to change without any prior notice. before purchasing or using any 0 r v w h f k products listed in this document, please confirm the latest product information with a 0 r v w h f k sales office. also, please pay regular and careful attention to additional and different information to be disclosed by 0 r v w h f k such as that disclosed through our website. (http://www. p w v h p l.com ) 5. 0 r v w h f k has used reasonable care in compiling the information included in this document, but 0 r v w h f k assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. when using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. 0 r v w h f k makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or 0 r v w h f k products. 7. with the exception of products specified by 0 r v w h f k as suitable for automobile applications, 0 r v w h f k products are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. if you are considering the use of our products for such purposes, please contact a 0 r v w h f k sales office beforehand. 0 r v w h f k shall have no liability for damages arising out of the uses set forth above. 8. notwithstanding the preceding paragraph, you should not use 0 r v w h f k products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life 0 r v w h f k shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use 0 r v w h f k products in any of the foregoing applications shall indemnify and hold harmless 0 r v w h f k technology corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. you should use the products described herein within the range specified by 0 r v w h f k, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. 0 r v w h f k shall have no liability for malfunctions or damages arising out of the use of 0 r v w h f k products beyond such specified ranges. 10. although 0 r v w h f k endeavors to improve the quality and reliability of its products, ic products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a 0 r v w h f k product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. in case 0 r v w h f k products listed in this document are detached from the products to which the 0 r v w h f k products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. you should implement safety measures so that 0 r v w h f k products may not be easily detached from your products. 0 r v w h f kshall have no liability for damages arising out of such detachment. 12. this document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from 0 r v w h f k. 13. please contact a 0 r v w h f k sales office if you have any questions regarding the information contained in this document, 0 r v w h f k semiconductor products, or if you have any other inquiries. notes regarding these materials mos-tech semiconductor co.,ltd ?20 0 2 6 7 ( & + semiconductor corporation z z z p w v h p l f r p free datasheet http:/// 1. cm za}* b*eey? 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[ ? ?5a[!nieq8?[( ?cautions? k y!7? o? ?20 0 2 6 7 ( & + semiconductor corporation z z z p w v h p l f r p mos-tech semiconductor co.,ltd 1. mos-tech semiconductor corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. keep safety first in your circuit designs! free datasheet http:/// |
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